We report the selective chemical etching of heterostructures. The selectivity of over by 1:1:2 of is above 85. Better‐defined mesa etching patterns, however, are obtained by a solution with lower content such as 1:1:1 with a selectivity of 34. The etching recipe reported here is promising for heterostructure device applications.
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He et al. (1992) studied this question.
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