A 14-GHz 4-bit p-i-n microstrip phase shifter with low RF attenuation, fast switching time, and low switching power requirements is described. The insertion loss for the 16 phase states is 1.4 dB/spl plusmn/0.1 dB over the 14-14.5-GHz band. This insertion loss, obtained with a forward bias current of 2.5 mA/diode, is the lowest reported for comparable phase shifters. Switching time of each of the 4 cells is 1 ns. Driving power per cell is 15 mW for a switching repetition rate of 1 mu s.
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B. Glance (1980) studied this question.
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