Capacitance−voltage characteristics of high quality Pt Schottky diodes fabricated on oxygen-vacancy-doped SrTiO3 single crystals were used to obtain the oxygen vacancy profiles within one microns of the Pt interface. Computer simulations based on solving the drift-diffusion equations for electrons and ionized vacancies were performed to understand the experimentally observed oxygen vacancy profile’s time-evolution at room temperature and 0 V applied bias. Building upon this understanding, the diode’s room temperature profile evolution under −35 V applied bias was analyzed to yield a vacancy mobility value of 1.5 × 10−13 cm2/V·s at an electric field of 500 kV/cm. This mobility is 8 orders of magnitude too low to produce nanosecond resistance switching in thin film devices. The applicability of the results to oxygen-migration-based resistance switching is discussed relative to recent observations and modeling.
No takes yet. Share an insight, caveat, or question.
Jiang et al. (2011) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: