Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
April 19, 2011Journal of Physics D Applied Physics

Thermographic analysis of localized conductive channels in bipolar resistive switching devices

View Full Paper
Ask AI
Bookmark
Share

Authors

YLYi LuWJWenkan JiangMNMohammad Noman

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Lu et al. (2011) studied this question.

synapsesocial.com/papers/6a6f7c6fac440176ef282950https://doi.org/10.1088/0022-3727/44/18/185103
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Hydrogen attack of pressure-vessel steels1985 · 53 citations
  2. 2The mechanism of electroforming of metal oxide memristive switches2009 · 848 citations
  3. 3Bipolar resistance switching in high-performance Cu/ZnO:Mn/Pt nonvolatile memories: active region and influence of Joule heating2010 · 93 citations
  4. 4Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films2007 · 430 citations
  5. 5Impact of Defect Distribution on Resistive Switching Characteristics of Sr<sub>2</sub>TiO<sub>4</sub> Thin Films2009 · 232 citations