Gallium Oxide has attracted a great deal of attention for power electronics due to its large bandgap (∼4.8 eV) as well as availability of cost effective, large area, high quality substrates. In this article, we will discuss advancements in homoepitaxial and heteroepitaxial growth of β-(Al,Ga) 2 O 3 and their heterostructures via different growth techniques with the emphasis on metal organic chemical vapor deposition, molecular beam epitaxy, and halide vapor phase epitaxy. We will also review various device structures demonstrated for high power applications.
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Jian et al. (2019) studied this question.
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