The process kinetics, chemical composition, morphology, microstructures, and stress of rapid-thermal low pressure metalorganic chemical vapor deposited (RT-LPMOCVD) TiNx films on InP, using a combined reactive chemistry of ammonia (NH3) gas and tetrakis (dimethylamido) titanium (DMATi) liquid precursors, were studied. Enhanced deposition rates of 1–3 nm s−1 at total chamber pressures in the range of 3–10 Torr and temperatures of 300 °C–350 °C at a NH3:DMATi flow rate ratio of 1:8 to 1:15 were achieved. Stoichiometric film compositions were obtained, with carbon and oxygen impurity concentrations as low as 5%. Transmission electron microscopy analysis identified the deposited films as TiN with some epitaxial relationship to the underlying (001) InP substrate. This process provides a superior film to the preview RT-LPMOCVD TiNx film deposited using only the DMATi precursor.
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Katz et al. (1992) studied this question.
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