We have investigated the interaction between Ti and in the temperature range of 400° to about 1000°C. The reaction proceeds in a layer‐by‐layer fashion and consists of reduction followed by the formation of a Ti‐rich silicide at the interface. At higher temperatures, a Ti‐rich oxide is formed near the surface. The reaction starts at approximately 400°C, and the loss of becomes significant above 500°C. A strong interaction between Ti and takes place at 700°C and above. The thicker the , the higher resistance it has to degradation due to elevated temperature effects.
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Ting et al. (1984) studied this question.