Silicide doping technology in formation of TiSi2 /n+ p shallow junction by salicide process

The fabrication of a shallow n+ p junction by diffusing arsenic atoms from the As+ -implanted TiSi2 into the underlying silicon has been developed. The amendment of the radiation damage and the activation of impurities can be fulfilled in one annealing process in conjunction with the dopant drive-in. The junction depth below the TiSi2 /Si interface is about 0.11 μm, and is insensitive to the values of implanted ion energy and the annealing condition as long as the dopants remain in the TiSi2 film. The dopant concentration near the surface in the n+ region can be added up to 2×1019 /cm3 for an implanted dose of 5×1015 /cm2 .