We report a detailed study of the exchange interactions in the neutral Mn acceptor, A0, and excitons bound to Mn acceptors, A0X, in bulk GaAs. By means of spin-flip Raman scattering we measured the constant of antiferromagnetic exchange interaction between valence band holes and electrons in the inner Mn shell, deformational fields near Mn ions, g-factors of electrons in the inner Mn shell, and the g-factor of the A0 center. Our results show that Mn acting as deep acceptor in GaAs strongly modifies spin interactions in the A0X complex. The strong coupling of the Mn 3d5 core states with holes and electrons reveals itself in multi-spin-flip Raman processes and leads to the renormalization of the conduction band electron g-factor.
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Sapega et al. (2001) studied this question.
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