Available data about the dependence of EBIC contrast c of extended defects on sample temperature T and beam current Ib are analysed. Two main types of behaviour are distinguished characterized by negative c(Ib)/positive c(T) slope and positive c(Ib)/negative c(T) slope, respectively. The former is attributed to defect charging (deep states) and the latter to shallow centres. Further, chemomechanical polishing is shown to influence the defect recombination activity.
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Kittler et al. (1993) studied this question.
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