Electron Spin Echo Decay Behaviours of Phosphorus Doped Silicon

Electron spin echo decay behaviours of the shallow trapped donor electrons in the phosphorus doped silicon at liquid helium temperatures have been studied. The spin echo signals were observed for the samples whose donor concentrations were less than 2.0×10 17 cm -3 . From the experimental date the region of the concentration has been divided into three. In each region has been observed the characteristic spin echo decay behaviour, which has been analyzed by using the stochastic model.