A two-step spin-coating process was used to synthesize perovskite films at ambient conditions. Combining a PEDOT:PSS hole-transport layer and a PC ₇₁ BM acceptor, the device achieves a power conversion efficiency of 16.31% with a remarkably high V oc of 1.05 V and FF of 0.78.
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Chiang et al. (2014) studied this question.
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