High-efficiency electroabsorption waveguide modulators have been designed and fabricated using strain-compensated InAsP-GaInP multiple quantum wells at 1.32-μm wavelength. A typical 200-μm-long modulator exhibits a fiber-to-fiber optical insertion loss of 9 dB and an optical saturation intensity larger than 10 mW. The 3-dB electrical bandwidth is in excess of 20 GHz with a 50-/spl Omega/ load termination. When used in an analog microwave fiber-optic link without amplification, a RF link efficiency as high as -38 dB is achieved at 10 mW input optical carrier power. These analog link characteristics are the first reported using MQW electroabsorption waveguide modulators at 1.32 μm.
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Loi et al. (1996) studied this question.
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