Thick n-type layers near the surface of p-Hg 1-x Cd x Te produced as a result of low energy ion milling have been investigated. EBIC measurements of cleaved cross sections show the depth and shape or the p-n junction under the surface of (HgCd)Te. An analysis of the n-type layers by differential Hall effect measurements is reported. It was found that the electron concentration in the n-type layer is of the order of 10 15 cm -3 and is nearly constant from the surface to the p-n junction. A diminishing density of etch pits was found on the surfaces influenced by ion milling. A model for the p-n conversion during ion milling is discussed.
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Belas et al. (1993) studied this question.
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