We studied the effects of plasma oxidation on the electrical properties of Ba2YCu3O7−y thin films. Films were prepared by electron beam evaporation, then annealed in oxygen. Plasma oxidation, performed in a barrel reactor, lowered the room-temperature resistivity of films and raised the zero-resistance temperature. Film resistivity increased a few percent a day after plasma oxidation. The rate of resistivity increase is several times that of untreated samples. Changes in resistivity and critical temperature could be completely reversed by repeated plasma treatment.
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Tamura et al. (1988) studied this question.
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