High‐Performance Organic Field‐Effect Transistors

Abstract With the advent of devices based on single crystals, the performance of organic field‐effect transistors has experienced a significant leap, with mobility now in excess of 10 cm 2 V −1 s −1 . The purpose of this review is to give an overview of the state‐of‐the‐art of these high‐performance organic transistors. The paper focuses on the problem of parameter extraction, limitations of the performance by the interfaces, which include the dielectric–semiconductor interface, and the injection and retrieval of charge carriers at the source and drain electrodes. High‐performance devices also constitute tools of choice for investigating charge transport phenomena in organic materials. It is shown how the combination of field‐effect measurements with other electrical characterizations helps in elucidating this still unresolved issue.