Erbium-doped oxidized porous silicon for integrated optical waveguides

It is shown for the first time that introducing erbium lectrochemically into waveguide structures based on oxidized porous silicon not only preserves their waveguide properties but it also opens up prospects for producing active waveguide devices based on them. It is established that erbium in a waveguide is in an optically active state and light with wavelengths 381 and 523 nm excites the erbium ions most efficiently.