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SiO 2 glass films doped with GeO 2 were prepared by the flame hydrolysis deposition method, then annealed at 1200°C. After exposure to high pressure hydrogen, the as-deposited films were irradiated with excimer laser pulses operated at 248 nm. The induced refractive index change (the growth of index change was 0.33%) was measured by a spectroscopic ellipsometer. A waveguide array has been written in the film by irradiation through a phase mask.
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Wu et al. (2002) studied this question.
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