1.3 µm laser diodes with butt-jointed selectivelygrown spot-sizeconverters uniformly fabricated on a 2 in InP substrate

1.3 µm laser diodes with butt-jointed selectively grown spot-size converters have been successfully fabricated on a 2 in InP substrate. Their threshold current and far-field patterns were uniformly distributed over the 2 in wafer. These uniform characteristics were obtained by combining uniform MOVPE growth, wet etching, and CH4/H2 reactive ion etching.