This paper describes the optimum design, fabrication, and performance of a 1.3-/spl mu/m multiple-quantum-well (MQW) laser diode monolithically integrated with a tapered thickness spot-size transformer. The dependence of the lasing characteristics on the thickness distribution of the core layer and on the current injection profile of the device were analyzed. This integrated laser with its optimized structure performed at a low threshold current of 22.2 mA, even at 85/spl deg/C. The integrated spot-size transformer effectively reduced the lateral and vertical far-field FWHM's to 8/spl deg/ and 9/spl deg/, respectively. A very long lifetime of over 1/spl times/10/sup 5/ h was estimated at 85/spl deg/C and 8 mW under CW operation.
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Kobayashi et al. (1997) studied this question.
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