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We report on a novel implementation of long-wavelength vertically-coupled waveguide-integrated metal-semiconductor-metal (MSM) InGaAs photodetectors which results in a significantly improved guide-to-absorber coupling efficiency. By employing an In/sub 0.53/Al/sub 0.31/Ga/sub 0.16/As buried strip waveguide embedded in InP, a coupling length of only 20 μm is sufficient to obtain an internal quantum efficiency greater than 95%. Moreover, the photoresponse is found to be virtually independent of the polarization state of light coupled into the input waveguide. The device parameters agree with the results of eigenmode calculations.
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Kollakowski et al. (1997) studied this question.
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