The current blocking mechanism in InP buried heterostructure (BH) lasers is analyzed with a self-consistent, two-dimensional numerical analysis method. It has been clarified that quasi-Fermi potentials which are kept constant in the active region under lasing oscillation play a key role in determining the current blocking capability. Due to this potential pinning effect, the junction voltages at each constituent p-n junction in the blocking regions are maintained lower than the electrical turn-on voltage, which realizes an excellent current blocking in BH lasers.
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Seki et al. (1992) studied this question.
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