Transient responses of In/sub 0.53/Ga/sub 0.47/As MSM PDs with abrupt and graded barrier-enhancement layers are simulated by using an ensemble Monte Carlo technique. The effect of the graded layer on transient responses and an appropriate graded-layer thickness for achieving fast responses are discussed. Also, a relevant device scaling law is proposed for In/sub 0.53/Ga/sub 0./,/sub 47/As MSM PDs with graded barrier-enhancement layers.>
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Eiichi Sano (1992) studied this question.
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