Answers are grounded in this paper and cite their sources.
Intrasubband scattering rates are calculated for electrons and holes at finite temperatures in highly excited semiconductor strained-layer quantum-well structures. Carrier-carrier and carrier-phonon interactions are taken into account on an equal basis within the fully dynamic random-phase approximation for multisubband structures. It will be shown that the strain-induced changes in the valence-band structure exert a significant influence on the scattering rates of the electrons as well as the holes. The screening of carrier-phonon interaction by the electron-hole plasma in the coupled electron-hole-phonon system is discussed and analyzed.
No takes yet. Share an insight, caveat, or question.
Seki et al. (1994) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: