A single growth step ridge waveguide InGaAs/GaAs quantum well laser with one third-order distributed Bragg reflector (DBR) and one cleaved facet is described. The DBR is fabricated with direct write electron beam lithography and transferred into the epilayers by reactive ion etching. These devices operate on a single longitudinal and fundamental lateral mode, with a threshold current of 23 mA and more than 30 dB of sidemode suppression.
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Smith et al. (1994) studied this question.
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