A monolithically integrated optoelectronic receiver based on the pseudomorphic InGaAs on GaAs material system has been fabricated and tested for the first time. Quarter-micrometer modulation-doped field-effect transistors (MODFETs) with f/sub t/'s of 66 GHz are used in the two-stage transimpedance amplifier design. The circuit utilizes all active components including a metal-semiconductor-metal (MSM) photodetector and a common-gate FET active feedback resistor.>
No takes yet. Share an insight, caveat, or question.
Keterson et al. (1992) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: