The fabrication and performance of the first monolithically integrated In/sub 0.53/Ga/sub 0.47/As JFET voltage-tunable transimpedance amplifier for use in InP-based optoelectronic integrated circuits are reported. A narrow-gate transistor is used as an active feedback resistor. The two-stage voltage amplifier has a voltage gain of 10.7 and a bandwidth of 350 MHz. The closed-loop transimpedance of the amplifier is tunable from 10 to 24 k Omega by controlling the gate bias of the feedback transistor.>
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Lo et al. (1990) studied this question.
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