We report on the improved performance of InAlAs-InGaAs-InP metal-semiconductor-metal photodetectors (MSMPDs) with graded superlattice structure grown by gas source molecular beam epitaxy. Low dark current density of 0.75 pA/μm2at 10-V bias, high-breakdown voltage of >40 V at 10 μA and fast transient response of /spl sim/16 ps (t/sub r/, FWHM and t/sub f/) at 5-V bias have been obtained.
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Zhang et al. (1996) studied this question.
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