GaInAsP/InP buried heterostructure lasers with anti-melt back layer emitting at 1.6 µm wavelength were fabricated and operated in a single mode in cw condition at room temperature. The gain suppression in spontaneously emitting resonant modes due to the lasing mode was found out, and it was significantly larger than that in lightly doped GaAs/AlGaAs DH lasers.
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Itaya et al. (1980) studied this question.
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