Effect of alloy clustering on the high-temperature electron mobility in In1−xGaxAsyP1−y

Hall measurements on liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to InP have been performed in the temperature range 300≤T(K)≤600 °C. The crystals were grown at 640 °C. Anomalous lowering of the mobility and carrier concentration has been observed at these temperatures for certain alloy compositions. It is believed that clustering due to miscibility gaps existing in these solid compositions is responsible for the observed data. Interpretations of the data based on this assumption have been made.