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Femtosecond time-resolved luminescence spectroscopy is used as a novel tool to study the ultrafast transport in interdigitated metal-semiconductor-metal Schottky diodes. The time-resolved luminescence signals of GaAs-MSM diodes depend strongly on bias voltage and carrier density. In these experiments, field-induced transfer to indirect valleys is directly observed in the time domain for the first time.
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Kersting et al. (1993) studied this question.
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