Depletion and enhancement mode In0.53Ga0.47As/InP junction field-effect transistor with a p+-InGaAs confinement layer

A self-aligned all-In0.53Ga0.47 As junction field-effect transistor structure grown by molecular beam epitaxy is described, using p+-InGaAs as the confinement layer for the n channel. Devices have been made to operate in either the depletion mode or the enhancement mode. Transconductances of 90 mS/mm have been observed, with low capacitance (0.7 pF/mm) and low gate leakage.