InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method

High-quality In 0.52 (Ga 0.5 Al 0.5 ) 0.48 As/In 0.52 Ga 0.48 As (In 0.52 Al 0.48 As) multi-quantum-well (MQW) structures with ternary Inlays welts (quaternary InGaAlAs welts) lattice-matched to InP, were grown by MBE using the pulsed molecular beam method. Very narrow full width at half maximums (FWHMs) of photoluminescence spectra (4.2 K) of 10.8 mcV to 5.7 meV for 15-Å-to 100-Å-thick-InGaAs welts were obtained. These values are the narrowest FWHMs ever reported for MQW structures with quaternary InGaAlAs.