A high quality In0.53Ga0.47As Schottky barrier diode fabricated by using a thin graded superlattice (SL) of In0.53Ga0.47As/In0.52Al0.48As grown by molecular beam epitaxy is reported for the first time in this letter. The effective Schottky barrier heights of ∼0.71 and ∼0.60 eV were obtained for the Au- and Cr-Schottky contacts, respectively. Excellent current-voltage and capacitance-voltage characteristics were obtained for these diodes. The graded InGaAs/InAlAs SL structure allows one to circumvent the problem of carrier pileup associated with abrupt heterostructures, and hence is advantageous for forming Schottky contacts on InGaAs for high-speed optoelectronic device applications.
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Lee et al. (1989) studied this question.
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