We describe the fabrication process for InGaAs submicrometer gate JFET's, using Be ion implantation and wet chemical etching. A gate length as small as 0.5 µm can be formed by this technique. Such FET's made on MBE-grown material bad a dc trans-conductance as high as 85 mS/mm and showed a high power-handling capability.
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Chai et al. (1983) studied this question.
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