On the optimum off-cut angle for the growth on InP(111)B substrates by molecular beam epitaxy

InGaAs and InAlAs epilayers were grown on InP(111)B substrates by molecular beam epitaxy. Rather than focusing on a specific off-cut angle, the growths were done on rounded wafer edges, which expose a broad spectrum of vicinal surfaces with varying off-cut angle and off-cut azimuth. The epilayers were grown at several different growth conditions by varying the growth temperature, growth rate, and arsenic (As) overpressure. The epitaxial layers were characterized at the center and the edge of the wafers using Nomarski differential interference contrast microscopy and atomic force microscopy. It was shown that a minimum misorientation angle of ∼0.4° should be used in order to avoid pyramidal hillocks. At higher misorientations, 1.7°–3°, step bunching can lead to surface roughening.