A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition

Three-step selective area metalorganic chemical vapor deposition is used to fabricate strained layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LEDs. We have fabricated a device with a continuous variation in quantum well thickness along its length by using a tapered oxide width mask for the active region regrowth. A spectral emission width of 80 nm is obtained.>