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August 1, 1975IEEE Transactions on Electron Devices

A new heterojunction gate GaAs FET

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Authors

SUS. UmebachiKAK. AsahiPanasonic (Japan)MIM. InoueThe University of Tokyo

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Umebachi et al. (1975) studied this question.

synapsesocial.com/papers/6a6fbe2de71d69abee082fd9https://doi.org/10.1109/t-ed.1975.18186
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