Ion implantation of Si and Be in Al0.48In0.52As

Electrical characterization of (Al,In)As ion implanted with Be and Si following low and high dose multiple energy implant schedules, and annealed between 740 and 815 °C with a pyrolytic silicon dioxide cap is reported. Only very low activation of Be is achieved (<3%). Silicon activation is considerably higher (>40%) and increases with increasing anneal temperature. However, a high concentration n-type surface layer is found on samples annealed at 815 °C. This surface layer is not found on similarly annealed samples which were not implanted, or which were implanted with phosphorus.