We report on a new chemical preparation procedure of InP {001} substrates which results in clean, oxide free surfaces, without the need of a high temperature thermal desorption of oxided surface phases. It mainly consists of a deoxidation by HF-ethanol solution, performed on a spinner operated in a nitrogen dry box, after a standard chemical etching using H 2 SO 4 /H 2 O 2 /H 2 O mixture. It is shown that such chemically deoxided surfaces are obtained with the typical InP {001} surface reconstructions for a significantly lower annealing temperature than those prepared without this deoxidation step.
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Massies et al. (1986) studied this question.
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