"Zero" Drain-Current Drift of Inversion-Mode NMOSFET on InP(111)A Surface

Inversion-mode n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al 2 O 3 as gate dielectric were fabricated on two crystalline surfaces: InP (100) and InP (111)A. A record high drain current of 600 μA/μm is obtained on InP (111)A surface at V ds = V gs = 3 V with a gate length of 1 μm and Al 2 O 3 dielectric thickness of 8 nm. The maximum drain current is greater by a factor of 3.5 on the InP (111)A surface compared to devices fabricated on the InP (100) surface at the same bias conductions. During room temperature positive gate stress, "zero" drain current drift is observed for InP (111)A devices, in great contrast to InP(100) devices. The greater maximum drain current and the "zero" drain current drift on InP (111)A can be explained by oxide band bending caused by trap neutral level shifts and low border trap density.