Effects of deposition temperature of insulator films on the electrical characteristics of InP metal-insulator-semiconductor field-effect transistors

Techniques of vapor etching of InP substrates and in situ deposition of phosphorus nitride film were applied to fabricate accumulation-mode InP metal-insulator-semiconductor field-effect transistors, where the temperature of vapor etching and deposition ranged from 250 to 500 °C. It has been found that the effective mobility of electrons in the surface layer of InP substrates decreases with the increase of the deposition temperature, and 450 °C as the substrate temperature during the etching and deposition was found to result in the smallest drain current drift, which was less than 2% of the initial value of drift.