A planar GaAs MOSFET has been realised in which ion implantation is used for device isolation and wet thermal oxidation of Al0.98Ga0.02As for both the gate insulation and channel encapsulation. Selective etches of AlGaAslGaAs and Al2O3/GaAs were incorporated in the device fabrication. The depletion-mode device has a threshold voltage of about –4 V, a transconductance of 23.9 mS/mm and a low gate leakage current.
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Yu et al. (2000) studied this question.
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