Small-area high-radiance LED’s fabricated from AlGaAs-GaAs double-heterostructure wafers grown by molecular beam epitaxy are reported. Both oxide-confinement and reverse-biased junctions were employed to confine the injection current to the small light-emitting areas. The series resistance of the diodes was reduced by zinc diffusions into and near the active region and both the linearity and the power saturation characteristics were improved. The interfacial recombination rate was determined to be about 6.6×103 cm/sec. These results are compared with LED’s made by liquid-phase epitaxy.
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Lee et al. (1978) studied this question.
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