Analysis of electric field effect in quantum box structure and its application to low-loss intersectional type optical switch

The electric field induced refractive-index variation and the refractive-index variation-absorption loss variation ratio in a GaInAs/InP quantum box (QB) structure are analyzed and applied to an intersectional type optical switch. The large index variation of a few percent with low absorption characteristics in a QB structure, is found to be very useful to decrease the insertion loss at both the ON and OFF state of a QB intersectional-type optical switch. It is shown that in such a switch the loss can be decreased to less than 1 dB. The QB size dependence and fluctuations in QB size on QB-intersectional type optical switch are also discussed.>