A simple technique for measuring submicron diffusion lengths in semiconductors is described. It consists, basically, in measuring the photocurrent of a Schottky barrier as a function of applied reverse bias. The modification of the photoresponse due to electroabsorption effects in the barrier region has to be taken into account and is discussed here. The diffusion length of n-type GaAs doped at a concentration of 2.7×1017/cm3 is found to be 0.23 mm.
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Dorantes‐Dávila et al. (1981) studied this question.
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