Incoherent light annealing of Mg implanted GaAs

Mg+ ions were implanted into (100) semi-insulating GaAs at room temperature with doses ranging from 5 × 1013 to 1 × 1015/cm2 with an energy of 100 keV. The samples were annealed using CVD Si3N4 as an encapsulant at temperstures ranging from 700 to 950°C for times of 10 s and 30 s, using an incoherent light furnace. A maximum electrical activity of 98 % was obtained for a sample implanted to 5 × 1013/cm2 and annealed at 900°C for 30 s. The depth profiles were found to be dose dependent and showed less redistribution than furnace anneals. A maximum hole concentration of about 3 × 1019/cm3 was obtained for a dose of 1 × 1015/cm2 annealed at 900 °C for 10 s.