Dependence of Growth Properties of Silicon-Doped GaAs Epitaxial Layers upon Orientation

B. H. Ahn; Richard R. Shurtz; C. W. Trussell

doi:10.1063/1.1659807

October 1, 1971Journal of Applied Physics

Dependence of Growth Properties of Silicon-Doped GaAs Epitaxial Layers upon Orientation

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Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation B. H. Ahn, R. R. Shurtz, C. W. Trussell; Dependence of Growth Properties of Silicon‐Doped GaAs Epitaxial Layers upon Orientation. J. Appl. Phys. 1 October 1971; 42 (11): 4512–4513. https://doi.org/10.1063/1.1659807 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioJournal of Applied Physics Search Advanced Search |Citation Search

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synapsesocial.com/papers/6a6fbf192163a0a01bc40426 https://doi.org/10.1063/1.1659807

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Dependence of Growth Properties of Silicon-Doped GaAs Epitaxial Layers upon Orientation

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Dependence of Growth Properties of Silicon-Doped GaAs Epitaxial Layers upon Orientation

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