Radiation sensitive characteristics of a uniform InSb—metal-oxide-semiconductor (MOS) structure have been used to detect images. By rapid optical scanning this structure with visible light of 0.63 μ we have detected infrared images due to 5-μ radiation. In addition information can be read-in and stored (or ``photographed'') by using 1-μ radiation, nondestructively read-out with 5-μ radiation, and erased with 0.25-μ radiation.
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Phelan et al. (1967) studied this question.
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