We report direct detection of light emission from single-crystal silicon cleaved in vacuum. The emission occurs in at least two wavelength regions, one above 1 eV energy (A) and the other between 0.25 and 0.36 eV (B). Intensities for about 0.1-cm² cleaved areas are in the region of 10¹² photons in region A and 10¹¹ photons in region B. The B radiation is of significantly longer duration than the A radiation. Some of the latter can be explained by radiative bulk band recombination, and the B radiation by radiative surface band recombination. The duration of the B radiation shows that the surface-state gap is indirect.
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Haneman et al. (1991) studied this question.
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